積層型半導体装置の製造方法

Abstract

A method of manufacturing a stacked-type semiconductor device, including the steps of: forming dividing grooves, having a depth corresponding to a finished thickness for a plurality of first chips formed on the face side of a wafer, on the face side of the wafer along planned dividing lines; stacking existing second chips on the first chips; covering the face-side surfaces of the second chips with a protective member; and grinding the back side of the wafer until the dividing grooves are exposed and the first chips are thinned to the finished thickness, to obtain semiconductor devices of a two-layer structure.

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